TR2025-014

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN Heterostructure

    •  Sikder, B., Hossain, T., Xie, Q., Niroula, J., Rajput, N.S., Teo, K.H., Amano, H., Palacios, T., Chowdhury, N., "Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN Heterostructure", Applied Physics Letters, January 2025.
      BibTeX TR2025-014 PDF
      • @article{Sikder2025jan,
      • author = {Sikder, Bejoy and Hossain, Toiyob and Xie, Qingyun and Niroula, john and Rajput, Nitul S. and Teo, Koon Hoo and Amano, Hiroshi and Palacios, Tomas and Chowdhury, Nadim}},
      • title = {Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN Heterostructure},
      • journal = {Applied Physics Letters},
      • year = 2025,
      • month = jan,
      • url = {https://www.merl.com/publications/TR2025-014}
      • }
  • Research Areas:

    Applied Physics, Electronic and Photonic Devices

Abstract:

This letter reports an investigation of hole transport in p-GaN/AlGaN/GaN heterostructures through experimental and theoretical analyses under varied conditions. Highly non-linear current-voltage (I-V ) characteristics, obtained via the linear transmission line method (LTLM) measurements, are utilized for this study. At low bias voltage, the transport can be ascribed to the Schottky nature of the contact, while at high bias, the conduction is observed to be governed by space-charge limited current (SCLC). The Schottky characteristics (Schottky Barrier height and non-ideality factor) and the SCLC exponent were analyzed for devices with varying contact spacings and at different high temperatures. The SCLC exponent, m ranges from 2 Less Than or Equal m Less Than or Equal 4 depending on the applied voltage range, revealing the existence of the trap states in the channel region. The findings of this work indicate that the charge injection, field-induced ionization, and trap states in the p-GaN channel are critical factors in the current transport of p-GaN/AlGaN/GaN heterostructure.