Compact modeling of gate leakage phenomenon in GaN HEMTs


In this paper, we provide a physical motivated compact model for AlGaN/GaN based High Electron Mobility Transistors (HEMTs). The device electrostatics and drain-source electron transport are modeled using previously published surface potential based I-V model for shortchannel III-Nitride HEMTs. The model presented here includes thermal emission (TE), trap-assisted tunneling (TAT), Poole Frenkel (PF) emission, and Fowler-Nordheim (FN) tunneling as the dominant sources of gate leakage. Excellent agreement between the model and fabricated AlGaN/GaN HEMTS with SiN passivation is demonstrated over a broad bias and temperature range between 298 K to 573 K.