TR2020-162
Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications
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- , "Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications", IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), DOI: 10.1109/RFIT49453.2020.9226187, November 2020.BibTeX TR2020-162 PDF
- @inproceedings{Teo2020nov,
- author = {Teo, Koon Hoo and Chowdhury, Nadim and Zhang, Yuhao and Palacios, Tomas and Yamanaka, Koji and Yamaguchi, Yutaro},
- title = {Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications},
- booktitle = {IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)},
- year = 2020,
- month = nov,
- doi = {10.1109/RFIT49453.2020.9226187},
- url = {https://www.merl.com/publications/TR2020-162}
- }
- , "Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications", IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), DOI: 10.1109/RFIT49453.2020.9226187, November 2020.
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MERL Contact:
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Research Areas:
Applied Physics, Communications, Electronic and Photonic Devices
Abstract:
Some recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.