TR2016-069
GaN HEMTs with Multi-functional p-Diamond Back-barriers
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- , "GaN HEMTs with Multi-functional p-Diamond Back-barriers", IEEE International Symposium on Power Semiconductor Devices (ISPSD), DOI: 10.1109/ISPSD.2016.7520789, June 2016, pp. 107-110.BibTeX TR2016-069 PDF
- @inproceedings{Zhang2016jun,
- author = {Zhang, Yuhao and Teo, Koon Hoo and Palacios, Tomas},
- title = {GaN HEMTs with Multi-functional p-Diamond Back-barriers},
- booktitle = {IEEE International Symposium on Power Semiconductor Devices (ISPSD)},
- year = 2016,
- pages = {107--110},
- month = jun,
- doi = {10.1109/ISPSD.2016.7520789},
- url = {https://www.merl.com/publications/TR2016-069}
- }
- , "GaN HEMTs with Multi-functional p-Diamond Back-barriers", IEEE International Symposium on Power Semiconductor Devices (ISPSD), DOI: 10.1109/ISPSD.2016.7520789, June 2016, pp. 107-110.
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Abstract:
This work for the first time explores the use of p-diamond as multi-functional back-barriers in GaN high electron mobility transistors (HEMTs). A well-calibrated self-consistent electro-thermal simulation has revealed that multi-functional p-diamond back-barriers can improve the performance of HEMTs, by achieving over 3 times higher breakdown voltage (BV), at least 30% higher thermal performance, enhanced 2DEG confinement and reduced short channel effects. These results indicate the great potential of the integration of GaN and diamond electronics for high-power and high-frequency applications.