TR2013-036

Design of Enhancement Mode Single-gate and Double-gate Multi-channel GaN HEMT with Vertical Polarity Inversion Heterostructure

    •  Feng, P., Teo, K.H., Oishi, T., Yamanaka, K., Ma, R., "Design of Enhancement Mode Single-gate and Double-gate Multi-channel GaN HEMT with Vertical Polarity Inversion Heterostructure", International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2013.
      BibTeX TR2013-036 PDF
      • @inproceedings{Feng2013may,
      • author = {Feng, P. and Teo, K.H. and Oishi, T. and Yamanaka, K. and Ma, R.},
      • title = {Design of Enhancement Mode Single-gate and Double-gate Multi-channel GaN HEMT with Vertical Polarity Inversion Heterostructure},
      • booktitle = {International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
      • year = 2013,
      • month = may,
      • url = {https://www.merl.com/publications/TR2013-036}
      • }
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  • Research Area:

    Applied Physics

Abstract:

We propose the design and simulation study of novel gallium nitride (GaN) devices, consisting of nitride stacks with different polarity, to provide multiple channels by flexible gate(s) control. Calibrated TCAD device simulations visualize device characteristics of 0.62-μm-gate-length multi-channel transistors. E-mode operations demonstrate a positive small threshold voltage Vth below 2 V at Vds = 0.1 V for all multichannel devices, and a high on-state current Ion (Vgs = Vds = 4 V) up to 4 A/mm achieved by 4 channels induced within the device.

 

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