TR2021-141
Full-Range Three-Stage 16GSa/s Riemann Pump RF-Power DAC in GaN HEMT
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- "Full-Range Three-Stage 16GSa/s Riemann Pump RF-Power DAC in GaN HEMT", Asia-Pacific Microwave Conference (APMC), DOI: 1109/APMC52720.2021.9661641, November 2021.BibTeX TR2021-141 PDF
- @inproceedings{Furuichi2021nov,
- author = {Furuichi, Tomoyuki and Ma, Rui and Koike-Akino, Toshiaki and Komatsuszaki, Yuji},
- title = {Full-Range Three-Stage 16GSa/s Riemann Pump RF-Power DAC in GaN HEMT},
- booktitle = {Asia-Pacific Microwave Conference (APMC) 2021},
- year = 2021,
- month = nov,
- doi = {1109/APMC52720.2021.9661641},
- isbn = {978-1-6654-3782-0},
- url = {https://www.merl.com/publications/TR2021-141}
- }
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- "Full-Range Three-Stage 16GSa/s Riemann Pump RF-Power DAC in GaN HEMT", Asia-Pacific Microwave Conference (APMC), DOI: 1109/APMC52720.2021.9661641, November 2021.
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MERL Contact:
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Research Areas:
Communications, Electronic and Photonic Devices, Signal Processing
Abstract:
In this study, we proposed a new encoding method to reduce power consumption and expanding the bit resolution of Riemann Pump (RP) digital-to-analog converters (DAC). In addition, a new circuit topology was demonstrated enabling highside and low-side GaN transistors to operate independently such that the power consumption is significantly reduced by preventing unnecessary current flow. Moreover, our design realizes higher bit-level compared with the state-of-the-art complementary encoding method. We designed and fabricated a 3.9-bit RP using 0.15um GaN process to validate its performance benefit. The simulation with practical device models confirms that our design can reduce power consumption and increase the bit-level with at least 16GSa/s sampling rate, which is the highest sampling rate reported so far in GaN technology to the best of our knowledge.