Full-Range Three-Stage 16GSa/s Riemann Pump RF-Power DAC in GaN HEMT

    •  Furuichi, T., Ma, R., Koike-Akino, T., Komatsuszaki, Y., "Full-Range Three-Stage 16GSa/s Riemann Pump RF-Power DAC in GaN HEMT", Asia-Pacific Microwave Conference (APMC) 2021, November 2021.
      BibTeX TR2021-141 PDF
      • @inproceedings{Furuichi2021nov,
      • author = {Furuichi, Tomoyuki and Ma, Rui and Koike-Akino, Toshiaki and Komatsuszaki, Yuji},
      • title = {Full-Range Three-Stage 16GSa/s Riemann Pump RF-Power DAC in GaN HEMT},
      • booktitle = {Asia-Pacific Microwave Conference (APMC) 2021},
      • year = 2021,
      • month = nov,
      • url = {}
      • }
  • MERL Contacts:
  • Research Areas:

    Communications, Electronic and Photonic Devices, Signal Processing


In this study, we proposed a new encoding method to reduce power consumption and expanding the bit resolution of Riemann Pump (RP) digital-to-analog converters (DAC). In addition, a new circuit topology was demonstrated enabling highside and low-side GaN transistors to operate independently such that the power consumption is significantly reduced by preventing unnecessary current flow. Moreover, our design realizes higher bit-level compared with the state-of-the-art complementary encoding method. We designed and fabricated a 3.9-bit RP using 0.15um GaN process to validate its performance benefit. The simulation with practical device models confirms that our design can reduce power consumption and increase the bit-level with at least 16GSa/s sampling rate, which is the highest sampling rate reported so far in GaN technology to the best of our knowledge.