TR2015-021

A Fully Analog Two-way Sequential GaN Power Amplifier with 40% Fractional BAndwidth

    •  Shao, J., Ma, R., Teo, K., Shinjo, S., Yamanaka, K., "A Fully Analog Two-way Sequential GaN Power Amplifier with 40% Fractional Bandwidth", IEEE MTT-S International Wireless Symposium (IWS), March 2015.
      BibTeX TR2015-021 PDF
      • @inproceedings{Shao2015mar,
      • author = {Shao, J. and Ma, R. and Teo, K. and Shinjo, S. and Yamanaka, K.},
      • title = {A Fully Analog Two-way Sequential GaN Power Amplifier with 40% Fractional Bandwidth},
      • booktitle = {IEEE MTT-S International Wireless Symposium (IWS)},
      • year = 2015,
      • month = mar,
      • url = {https://www.merl.com/publications/TR2015-021}
      • }
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  • Research Areas:

    Communications, Electronic and Photonic Devices

Abstract:

In this paper, we report a two-way sequential power amplifier (SPA) using GaN HEMTs. The proposed fully analog SPA delivers Past of approximately 40dBm over 2-3 GHz covering 40% fractional bandwidth. The design consists of a 3dB input coupler, a main amplifier, a peak amplifier, and a 10dB output coupler for power combining. After proper designing and optimizing these critical wideband couplers in terms of both phase and amplitude alignment, the measured final SPA shows 45% to 61% drain efficiency (DE) at 34dBm (5dB backoff) output from 2.1 to 2.9 GHz under CW stimulus. A complete set of SPA with analog RF input and output network is demonstrated.