TR2024-010

Fermi-Level Pinning Effect in Gate Region: A Case Study of Multi-Metal Gated AlGaN/GaN HEMT for High RF Linearity

    •  Hossain, T., sikder, B., Azad, M.T., Xie, Q., Yuan, M., Yagyu, E., Teo, K.H., Palacios, T., Chowdhury, N., "Fermi-Level Pinning Effect in Gate Region: A Case Study of Multi-Metal Gated AlGaN/GaN HEMT for High RF Linearity", IEEE Electron Devices Technology & Manufacturing Conference, DOI: 10.1109/​EDTM58488.2024.10512349, February 2024.
      BibTeX TR2024-010 PDF
      • @inproceedings{Hossain2024feb,
      • author = {Hossain, Toiyob and sikder, Bejoy and Azad, Md.Tasnim and Xie, Qingyun and Yuan, Mengyang and Yagyu, Eiji and Teo, Koon Hoo and Palacios, Tomas and Chowdhury, Nadim},
      • title = {Fermi-Level Pinning Effect in Gate Region: A Case Study of Multi-Metal Gated AlGaN/GaN HEMT for High RF Linearity},
      • booktitle = {IEEE Electron Devices Technology & Manufacturing Conference},
      • year = 2024,
      • month = feb,
      • doi = {10.1109/EDTM58488.2024.10512349},
      • url = {https://www.merl.com/publications/TR2024-010}
      • }
  • Research Area:

    Electronic and Photonic Devices

Abstract:

This work investigates the robustness of AlGaN/GaN multi- metal gated (MMG) HEMT architecture for gm3 optimization and linearity improvement in the presence of Fermi-Level pinning. Through Technology Computer-Aided Design (TCAD), Compact modeling and Load-Pull simulations, it is shown that despite incorporating FLP, employing MMG scheme improves device level gm3-suppression leading to an improvement in OIP3/Pdc and IMD3. Remarkably, OIP3/Pdc of 18.9 dB is obtained considering an FLP factor of 0.43, which is 10.7 dB improvement than the conventional planar HEMT. A comparative analysis on output power back-off (OBO) for conventional and MMG HEMT with different FLP factors establishes MMG as a robust architecture to FLP, and therefore a practical method to enhance linearity of GaN power amplifiers.

 

  • Related Publication

  •  Hossain, T., Hossain, T., Anindya Alam, A., sikder, B., Xie, Q., Yuan, M., Yagyu, E., Teo, K.H., Palacios, T., Chowdhury, N., Wang, Y., "System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity", Journal of Electron Devices Society, December 2024.
    BibTeX TR2024-171 PDF
    • @article{Hossain2024dec,
    • author = {Hossain, Toiyob and Hossain, Tanvir and Anindya Alam, A. and sikder, Bejoy and Xie, Qingyun and Yuan, Mengyang and Yagyu, Eiji and Teo, Koon Hoo and Palacios, Tomas and Chowdhury, Nadim and Wang, Yebin}},
    • title = {System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity},
    • journal = {Journal of Electron Devices Society},
    • year = 2024,
    • month = dec,
    • url = {https://www.merl.com/publications/TR2024-171}
    • }